Invention Grant
- Patent Title: Direct frequency tuning for matchless plasma source in substrate processing systems
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Application No.: US17267920Application Date: 2019-08-08
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Publication No.: US11728137B2Publication Date: 2023-08-15
- Inventor: Yuhou Wang , Maolin Long , Ying Wu , Alexander Miller Paterson
- Applicant: LAM RESEARCH CORPORATION
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Penilla IP, APC
- International Application: PCT/US2019/045681 2019.08.08
- International Announcement: WO2020/036803A 2020.02.20
- Date entered country: 2021-02-11
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
A drive circuit for providing RF power to a component of a substrate processing system includes a plasma source operating at a first frequency. A load includes the component of the substrate processing system. An impedance network connects the plasma source to the load. A current sensor senses current at an output of the plasma source. A voltage sensor senses voltage at the output of the plasma source. A controller includes a tuned frequency calculator configured to calculate a tuned frequency for the plasma source based on the voltage, the current, and a configuration of the impedance network and to adjust the first frequency based on the tuned frequency.
Public/Granted literature
- US20210210314A1 DIRECT FREQUENCY TUNING FOR MATCHLESS PLASMA SOURCE IN SUBSTRATE PROCESSING SYSTEMS Public/Granted day:2021-07-08
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