Invention Grant
- Patent Title: Semiconductor device having a stack including electrodes vertically stacked on a substrate and electronic system including the same
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Application No.: US17331951Application Date: 2021-05-27
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Publication No.: US11728246B2Publication Date: 2023-08-15
- Inventor: Sunggil Kim , Jinhyuk Kim , Jung-Hwan Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR 20200131406 2020.10.12
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L23/48 ; H01L25/065 ; H10B41/27 ; H10B43/27

Abstract:
A semiconductor device and an electronic system, the device including a substrate including a cell array region and a connection region; a stack including electrodes vertically stacked on the substrate; a source conductive pattern on the cell array region and between the substrate and the stack; a dummy insulating pattern on the connection region and between the substrate and the stack; a conductive support pattern between the stack and the source conductive pattern and between the stack and the dummy insulating pattern; a plurality of first vertical structures on the cell array region and penetrating the electrode structure, the conductive support pattern, and the source structure; and a plurality of second vertical structures on the connection region and penetrating the electrode structure, the conductive support pattern, and the dummy insulating pattern.
Public/Granted literature
- US20220115294A1 SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME Public/Granted day:2022-04-14
Information query
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