Invention Grant
- Patent Title: Quantum-dot light emitting diode, method of fabricating the quantum-dot light emitting diode and quantum-dot light emitting display device
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Application No.: US17876447Application Date: 2022-07-28
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Publication No.: US11744094B2Publication Date: 2023-08-29
- Inventor: Kyu-Nam Kim , Duk-Young Jeon , Hyun-Jin Cho , Sun-Joong Park
- Applicant: LG DISPLAY CO., LTD. , Korea Advanced Institute of Science and Technology
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.,Korea Advanced Institute of Science and Technology
- Current Assignee: LG Display Co., Ltd.,Korea Advanced Institute of Science and Technology
- Current Assignee Address: KR Seoul; KR Daejeon
- Agency: Morgan, Lewis & Bockius LLP
- Priority: KR 20190074869 2019.06.24
- The original application number of the division: US16909912 2020.06.23
- Main IPC: H01L51/50
- IPC: H01L51/50 ; H10K50/11 ; H10K50/15 ; H10K50/17 ; H10K50/115 ; H10K71/00 ; H10K85/10 ; H10K59/12 ; H10K85/60 ; H10K101/40 ; H10K101/30

Abstract:
The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode; a second electrode facing the first electrode; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron auxiliary layer positioned between the QD emitting material layer and the second electrode, wherein the organic material has a highest occupied molecular orbital (HOMO) level higher than a material of the hole auxiliary layer.
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