Invention Grant
- Patent Title: Manufacturing method of material of light emitting layer
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Application No.: US17873219Application Date: 2022-07-26
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Publication No.: US11753586B2Publication Date: 2023-09-12
- Inventor: Yanan Wang
- Applicant: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Guangdong
- Assignee: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Guangdong
- Agent Mark M. Friedman
- Priority: CN 2010251480.4 2020.04.01
- The original application number of the division: US16765527
- Main IPC: C09K11/02
- IPC: C09K11/02 ; C09K11/66 ; C09K11/77 ; H10K50/86 ; H10K85/60 ; H10K50/115 ; H10K71/00

Abstract:
A material of a light emitting layer, a manufacturing method thereof, and an electroluminescent device are disclosed. The material of the light emitting layer includes a spiral nanotube structure and luminescent particles. The manufacturing method of the material of the light emitting layer includes steps of manufacturing the spiral nanotube structure and steps of manufacturing a guest-host structure. The manufacturing method is easily achieved, and a compatibility of the material is high.
Public/Granted literature
- US20220380665A1 MANUFACTURING METHOD OF MATERIAL OF LIGHT EMITTING LAYER Public/Granted day:2022-12-01
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