Invention Grant
- Patent Title: Managing write disturb for units of memory in a memory sub-system using a randomized refresh period
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Application No.: US17946612Application Date: 2022-09-16
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Publication No.: US11756604B2Publication Date: 2023-09-12
- Inventor: Charles See Yeung Kwong , Seungjune Jeon
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Lowenstein Sandler LLP
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G11C29/42 ; G11C11/4096
Abstract:
A memory access operation performed on a first memory unit of a memory device is detected. A counter associated with the first memory unit is modified. It is determined that the counter satisfies a threshold criterion, wherein the threshold criterion is based on a random or pseudo-random number within a margin of an average number of memory access operations. A refresh operation is performed on a second memory unit.
Public/Granted literature
- US20230051408A1 MANAGING WRITE DISTURB FOR UNITS OF MEMORY IN A MEMORY SUB-SYSTEM USING A RANDOMIZED REFRESH PERIOD Public/Granted day:2023-02-16
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