Invention Grant
- Patent Title: All levels dynamic start voltage programming of a memory device in a memory sub-system
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Application No.: US17301139Application Date: 2021-03-26
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Publication No.: US11756612B2Publication Date: 2023-09-12
- Inventor: Jun Xu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Lowenstein Sandler LLP
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C11/56 ; G11C16/34 ; G11C16/10 ; G11C16/04
Abstract:
Control logic in a memory device identifies a set of a plurality of memory cells configured as multi-level cell (MLC) memory to be programmed during a program operation and causes one or more programming pulses to be applied to the set of the plurality of memory cells configured as MLC memory to program memory cells in the set of memory cells configured as MLC memory to respective programming levels of a plurality of programming levels as part of the program operation. Responsive to the one or more programming pulses being applied, the control logic further performs a program verify operation to verify whether the memory cell in the set of memory cells configured as MLC memory were programmed to the respective programming levels of the plurality of programming levels.
Public/Granted literature
- US20220310158A1 ALL LEVELS DYNAMIC START VOLTAGE PROGRAMMING OF A MEMORY DEVICE IN A MEMORY SUB-SYSTEM Public/Granted day:2022-09-29
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