- 专利标题： Semiconductor device manufacturing method
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申请号： US16906206申请日： 2020-06-19
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公开(公告)号： US11756793B2公开(公告)日： 2023-09-12
- 发明人: Yohei Ishii , Kathryn Maier , Medhat Khalil
- 申请人： Hitachi High-Tech Corporation
- 申请人地址： JP Tokyo
- 专利权人： HITACHI HIGH-TECH CORPORATION
- 当前专利权人： HITACHI HIGH-TECH CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： MILES & STOCKBRIDGE, P.C.
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H01L21/3213 ; H01L21/3065 ; H01L21/308
摘要：
A semiconductor device manufacturing method includes the steps of etching a semiconductor material by using plasma, forming a damage layer on the semiconductor material, and removing the damage layer such that a relatively low temperature process can form a fine pattern with a vertical cross section using a compound semiconductor material or the like.
公开/授权文献
- US20210202259A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 公开/授权日：2021-07-01
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