Invention Grant
- Patent Title: Semiconductor structure with oxidized ruthenium
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Application No.: US16953949Application Date: 2020-11-20
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Publication No.: US11756825B2Publication Date: 2023-09-12
- Inventor: Shen-Nan Lee , Teng-Chun Tsai , Chen-Hao Wu , Chu-An Lee , Chun-Hung Liao , Tsung-Ling Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- The original application number of the division: US16129899 2018.09.13
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/532 ; H01L23/522
Abstract:
A semiconductor structure is provided, including a conductive layer, a dielectric layer over the conductive layer, a ruthenium material in the dielectric layer and in contact with a portion of the conductive layer, and a ruthenium oxide material in the dielectric layer laterally between the ruthenium material and the dielectric layer.
Public/Granted literature
- US20210098283A1 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-04-01
Information query
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