- Patent Title: Semiconductor devices and data storage systems including the same
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Application No.: US17367082Application Date: 2021-07-02
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Publication No.: US11756900B2Publication Date: 2023-09-12
- Inventor: Yujin Kwon , Seokcheon Baek , Younghwan Son
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20200168384 2020.12.04
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/528 ; H01L25/18 ; H10B41/27 ; H10B43/27

Abstract:
A semiconductor device includes first and second gate electrodes stacked and spaced apart from each other in a first direction on a first region of a substrate, and extending in staircase form in a second direction on a second region of the substrate, the second gate electrodes disposed on the first gate electrodes; a first support structure penetrating the first gate electrodes on the second region, extending in the first direction, and having an upper end disposed at a level lower than a level of a lowermost second gate electrode among the second gate electrodes; a second support structure penetrating at least one of the first and second gate electrodes on the second region, extending in the first direction, and having an upper end disposed at a level higher than a level of un uppermost second gate electrode among the second gate electrodes.
Public/Granted literature
- US20220181273A1 SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME Public/Granted day:2022-06-09
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