The present disclosure provides a light emitting device including: a first electrode; a first light emitting layer on a side of the first electrode; an N-type charge generation layer on a side of the first light emitting layer distal to the first electrode; a P-type charge generation layer on a side of the N-type charge generation layer distal to the first light emitting layer; a second light emitting layer on a side of the P-type charge generation layer distal to the N-type charge generation layer; and a second electrode on a side of the second light emitting layer distal to the P-type charge generation layer. The N-type charge generation layer includes a host material which has a lowest unoccupied molecular orbital energy level less than or equal to −2.9 and a glass transition temperature greater than 130° C.