Invention Grant
- Patent Title: Perovskite light-emitting diode with adjustable light field
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Application No.: US17469833Application Date: 2021-09-08
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Publication No.: US11758748B2Publication Date: 2023-09-12
- Inventor: Xingang Ren , Qing Ci , Zhixiang Huang , Kaikun Niu , Ming Fang , Guangshang Cheng , Lixia Yang
- Applicant: Anhui University
- Applicant Address: CN Anhui
- Assignee: Anhui University
- Current Assignee: Anhui University
- Current Assignee Address: CN Hefei
- Priority: CN 2011223232.5 2020.11.05
- Main IPC: H10K50/16
- IPC: H10K50/16 ; H10K50/85 ; H10K50/135 ; H10K50/80 ; H10K101/00
Abstract:
This disclosure provides a perovskite light-emitting diode with an adjustable light field, including a glass layer, an anode, a hole transport layer, an emission layer, an electron transport layer and a cathode in sequence from top to bottom. The electron transport layer is provided with a periodic nano-grating structure.
Public/Granted literature
- US20210408424A1 PEROVSKITE LIGHT-EMITTING DIODE WITH ADJUSTABLE LIGHT FIELD Public/Granted day:2021-12-30
Information query
