Invention Grant
- Patent Title: Magnetoresistive stacks and methods therefor
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Application No.: US16188934Application Date: 2018-11-13
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Publication No.: US11758823B2Publication Date: 2023-09-12
- Inventor: Jijun Sun , Jon Slaughter , Renu Whig
- Applicant: Everspin Technologies, Inc.
- Applicant Address: US AZ Chandler
- Assignee: EVERSPIN TECHNOLOGIES, INC.
- Current Assignee: EVERSPIN TECHNOLOGIES, INC.
- Current Assignee Address: US AZ Chandler
- Agency: Bookoff McAndrews, PLLC
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H10N50/80 ; G11C11/16 ; H10B61/00 ; H10N50/01 ; H10N50/10 ; H10N50/85
Abstract:
A magnetically free region of magnetoresistive device includes at least a first ferromagnetic region and a second ferromagnetic region separated by a non-magnetic insertion region. At least one of the first ferromagnetic region and the second ferromagnetic region may include at least a boron-rich ferromagnetic layer positioned proximate a boron-free ferromagnetic layer.
Public/Granted literature
- US20190165253A1 MAGNETORESISTIVE STACKS AND METHODS THEREFOR Public/Granted day:2019-05-30
Information query
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