Apparatuses, systems, and methods for ferroelectric memory (FeRAM) cell operation. An FeRAM cell may have different charge regions it can operate across. Some regions, such as dielectric regions, may operate faster, but with reduced signal on a coupled digit line. To improve the performance while maintaining increased speed, two digit lines may be coupled to the same sense amplifier, so that the FeRAM cells coupled to both digit lines contribute signal to the sense amplifier. For example a first digit line in a first deck of the memory and a second digit line in a second deck of the memory may both be coupled to the sense amplifier. In some embodiments, additional digit lines may be used as shields (e.g., by coupling the shield digit lines to a ground voltage) to further improve the signal-to-noise ratio.