Invention Grant
- Patent Title: Field-effect transistors with a body pedestal
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Application No.: US15584121Application Date: 2017-05-02
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Publication No.: US11764060B2Publication Date: 2023-09-19
- Inventor: Michel J. Abou-Khalil , Steven M. Shank , Alvin J. Joseph , Michael J. Zierak
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GlobalFoundries U.S. Inc.
- Current Assignee: GlobalFoundries U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/762 ; H01L29/06 ; H01L29/16 ; H01L29/04 ; H01L29/10 ; H01L21/265 ; H01L29/78
Abstract:
Device structures for a field-effect transistor and methods of forming a device structure for a field-effect transistor. A trench isolation region is formed in a substrate, and surrounds a semiconductor body. An undercut cavity region is also formed in the substrate. The undercut cavity region extends laterally beneath the semiconductor body and defines a body pedestal as a section of the substrate that is arranged in vertical alignment with the semiconductor body.
Public/Granted literature
- US20180323066A1 FIELD-EFFECT TRANSISTORS WITH A BODY PEDESTAL Public/Granted day:2018-11-08
Information query
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