Invention Grant
- Patent Title: Semi-embedded trace structure with partially buried traces
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Application No.: US17107512Application Date: 2020-11-30
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Publication No.: US11764076B2Publication Date: 2023-09-19
- Inventor: Kuiwon Kang , Joan Rey Villarba Buot , Terence Cheung
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/498 ; H01L23/00

Abstract:
Certain aspects of the present disclosure generally relate to an embedded trace substrate with partially buried traces, methods for fabrication thereof, and apparatus comprising such an embedded trace substrate. One example method of fabricating an embedded trace substrate generally includes creating a pattern of conductive traces above a dielectric layer and mechanically pressing on the pattern of conductive traces such that lower portions of the conductive traces are buried in the dielectric layer.
Public/Granted literature
- US20220172963A1 SEMI-EMBEDDED TRACE STRUCTURE WITH PARTIALLY BURIED TRACES Public/Granted day:2022-06-02
Information query
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