Invention Grant
- Patent Title: Semiconductor structure with capacitor landing pad and method of making the same
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Application No.: US18076419Application Date: 2022-12-07
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Publication No.: US11765881B2Publication Date: 2023-09-19
- Inventor: Li-Wei Feng , Shih-Fang Tzou , Chien-Ting Ho , Ying-Chiao Wang , Yu-Ching Chen , Hui-Ling Chuang , Kuei-Hsuan Yu
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu; CN Quanzhou
- Agent Winston Hsu
- Priority: CN 1710102423.8 2017.02.24
- The original application number of the division: US17324114 2021.05.19
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H10B12/00 ; H01L21/768
Abstract:
A semiconductor structure with a capacitor landing pad includes a substrate. A capacitor contact plug is disposed on the substrate. A capacitor landing pad contacts and electrically connects the capacitor contact plug. A bit line is disposed on the substrate. A dielectric layer surrounds the capacitor landing pad. The dielectric layer includes a bottom surface lower than a top surface of the bit line.
Public/Granted literature
- US20230097175A1 SEMICONDUCTOR STRUCTURE WITH CAPACITOR LANDING PAD AND METHOD OF MAKING THE SAME Public/Granted day:2023-03-30
Information query
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