Invention Grant
- Patent Title: Method for forming a sensor circuit
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Application No.: US16456905Application Date: 2019-06-28
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Publication No.: US11768086B2Publication Date: 2023-09-26
- Inventor: Franz Jost , Harald Witschnig , Juergen Zimmer
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Banner & Witcoff Ltd.
- Priority: DE 2014119531.0 2014.12.23
- The original application number of the division: US14976348 2015.12.21
- Main IPC: G01D5/16
- IPC: G01D5/16 ; G01R33/09 ; G01R33/00 ; G01D3/08 ; H10B61/00 ; H10N59/00 ; H10N50/00

Abstract:
A method for forming a sensor circuit. The method includes forming a plurality of magnetoresistive structures having a first predefined reference magnetization direction in a first common area of a common semiconductor substrate; forming a plurality of magnetoresistive structures having a second predefined reference magnetization direction in a second common area of the common semiconductor substrate; and forming electrically conductive structures electrically coupling the magnetoresistive structures having the first predefined reference magnetization direction to the magnetoresistive structures having the second predefined reference magnetization direction to form a plurality of half-bridge sensor circuits, wherein each half-bridge sensor circuit comprises a magnetoresistive structure having the first predefined reference magnetization direction electrically coupled to a second magnetoresistive structure having the second predefined reference magnetization direction.
Public/Granted literature
- US20190316935A1 SENSOR CIRCUIT, A SENSOR DEVICE AND A METHOD FOR FORMING A SENSOR CIRCUIT Public/Granted day:2019-10-17
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