- 专利标题: Method for forming a sensor circuit
-
申请号: US16456905申请日: 2019-06-28
-
公开(公告)号: US11768086B2公开(公告)日: 2023-09-26
- 发明人: Franz Jost , Harald Witschnig , Juergen Zimmer
- 申请人: Infineon Technologies AG
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Banner & Witcoff Ltd.
- 优先权: DE 2014119531.0 2014.12.23
- 分案原申请号: US14976348 2015.12.21
- 主分类号: G01D5/16
- IPC分类号: G01D5/16 ; G01R33/09 ; G01R33/00 ; G01D3/08 ; H10B61/00 ; H10N59/00 ; H10N50/00
摘要:
A method for forming a sensor circuit. The method includes forming a plurality of magnetoresistive structures having a first predefined reference magnetization direction in a first common area of a common semiconductor substrate; forming a plurality of magnetoresistive structures having a second predefined reference magnetization direction in a second common area of the common semiconductor substrate; and forming electrically conductive structures electrically coupling the magnetoresistive structures having the first predefined reference magnetization direction to the magnetoresistive structures having the second predefined reference magnetization direction to form a plurality of half-bridge sensor circuits, wherein each half-bridge sensor circuit comprises a magnetoresistive structure having the first predefined reference magnetization direction electrically coupled to a second magnetoresistive structure having the second predefined reference magnetization direction.
公开/授权文献
信息查询