Invention Grant
- Patent Title: Diode triggered silicon controlled rectifier
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Application No.: US17704422Application Date: 2022-03-25
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Publication No.: US11769767B2Publication Date: 2023-09-26
- Inventor: Souvick Mitra , Robert J. Gauthier, Jr. , Alain F. Loiseau , You Li , Tsung-Che Tsai
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US NY Malta
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US NY Malta
- Agency: Calderon Safran & Cole, P.C.
- Agent Francois Pagette; Andrew M. Calderon
- Main IPC: H01L27/02
- IPC: H01L27/02
Abstract:
The present disclosure relates to semiconductor structures and, more particularly, to diode triggered Silicon controlled rectifiers and methods of manufacture. The structure includes a diode string comprising a first type of diodes and a second type of diode in bulk technology in series with the diode string of the first type of diodes.
Public/Granted literature
- US20220216198A1 DIODE TRIGGERED SILICON CONTROLLED RECTIFIER Public/Granted day:2022-07-07
Information query
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