A method includes receiving, at a dynamic random access memory (DRAM) device, a single READ-THEN-CLEAR command. The single READ-THEN-CLEAR command has a column address of a column in an array of memory cells. Particular data content is stored in memory cells associated with the column address. The method also includes, in response to receiving the single READ-THEN-CLEAR command, reading the particular data content and clearing the particular data content after reading the particular data content.