Invention Grant
- Patent Title: Memory with per die temperature-compensated refresh control
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Application No.: US17545966Application Date: 2021-12-08
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Publication No.: US11776612B2Publication Date: 2023-10-03
- Inventor: James S. Rehmeyer , Jason M. Johnson , Joo-Sang Lee
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G06F11/30

Abstract:
Memory devices, systems, and associated methods with per die temperature-compensated refresh control, and associated methods, are disclosed herein. In one embodiment, a memory device includes a plurality of memory cells and a sensor configured to measure a temperature of the memory device. The memory device determines a frequency at which it is receiving refresh commands. The memory device is further configured to skip refresh operations of the memory cells based, at least in part, on the determination and on the temperature of the memory device.
Public/Granted literature
- US20220101913A1 MEMORY WITH PER DIE TEMPERATURE-COMPENSATED REFRESH CONTROL Public/Granted day:2022-03-31
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