Invention Grant
- Patent Title: Interactive memory self-refresh control
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Application No.: US17513090Application Date: 2021-10-28
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Publication No.: US11783885B2Publication Date: 2023-10-10
- Inventor: Kang-Yong Kim , Hyun Yoo Lee
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Colby Nipper PLLC
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G11C7/10

Abstract:
Systems, apparatuses, and methods related to a memory device, such as a low-power dynamic random-access memory (DRAM), and an associated host device are described. The memory device includes control circuitry that can determine an operational status of the memory device (e.g., whether the memory device is currently performing a self-refresh operation). The control circuitry can also transmit a signal indicative of the operational status to the host device in response to receiving a command directing the memory device to exit a self-refresh mode. The host device can operate based on the signal. The signal may therefore allow the memory device, the host device, or both to manage operations, including whether to send, receive, or process commands and data read/write requests during times that may be associated with self-refresh operations.
Public/Granted literature
- US20220139448A1 Interactive Memory Self-Refresh Control Public/Granted day:2022-05-05
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