- 专利标题： Method for fabricating wafer scale/nano sub micron gap electrodes and arrays via photolithography
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申请号： US16755192申请日： 2018-10-09
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公开(公告)号： US11784227B2公开(公告)日： 2023-10-10
- 发明人: Leela Mohana Reddy Arava , Nirul Masurkar
- 申请人： Wayne State University
- 申请人地址： US MI Detroit
- 专利权人： Wayne State University
- 当前专利权人： Wayne State University
- 当前专利权人地址： US MI Detroit
- 代理机构： Fishman Stewart PLLC
- 国际申请： PCT/US2018/055089 2018.10.09
- 国际公布： WO2019/074977A 2019.04.18
- 进入国家日期： 2020-04-10
- 主分类号： H01L29/40
- IPC分类号： H01L29/40 ; G01N27/414 ; H01L29/417
摘要：
A electronic device and a fabrication method is provided. The electronic device having a first electrode and a second electrode. A nano-gap is formed between first and second electrode. The first electrode, the second electrode and the gap may be located in the same layer of the device.
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