- 专利标题： Semiconductor device structure with barrier layer
-
申请号： US17833363申请日： 2022-06-06
-
公开(公告)号： US11784240B2公开(公告)日： 2023-10-10
- 发明人: Chia-Yang Wu , Shiu-Ko Jangjian , Ting-Chun Wang , Yung-Si Yu
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/417 ; H01L29/78 ; H01L21/768 ; H01L21/762 ; H01L21/285 ; H01L29/49 ; H01L29/165
摘要：
A semiconductor device structure is provided. The semiconductor device structure includes a contact layer over a metal silicide layer. The contact layer extends through a first dielectric structure. The semiconductor device structure includes a first metal nitride barrier layer over sidewalls of the contact layer. The first metal nitride barrier layer is directly adjacent to the first dielectric structure. The semiconductor device structure includes a second metal nitride barrier layer partially between the contact layer and the metal silicide layer and partially between the contact layer and the first metal nitride barrier layer. The metal silicide layer is below the first metal nitride barrier layer and the second metal nitride barrier layer.
公开/授权文献
- US20220302283A1 SEMICONDUCTOR DEVICE STRUCTURE WITH BARRIER LAYER 公开/授权日：2022-09-22
信息查询
IPC分类:
