发明授权
- 专利标题： Substrate support
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申请号： US17653165申请日： 2022-03-02
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公开(公告)号： US11791139B2公开(公告)日： 2023-10-17
- 发明人: Shin Yamaguchi , Yasuharu Sasaki , Koei Ito
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： IPUSA, PLLC
- 优先权： JP 21036683 2021.03.08
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; H01L21/683
摘要：
A substrate support includes a base, a substrate support layer disposed on the base, the substrate support layer being formed of an insulating material, and an electrostatic internal electrode layer disposed in the substrate support layer, the electrostatic internal electrode layer including a body portion and a plurality of protruding portions, the body portion having a circular shape in a plan view, and the plurality of protruding portions radially protruding from the body portion.
公开/授权文献
- US20220285138A1 SUBSTRATE SUPPORT 公开/授权日：2022-09-08
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