Invention Grant
- Patent Title: System and method for residual gas analysis
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Application No.: US16942577Application Date: 2020-07-29
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Publication No.: US11791141B2Publication Date: 2023-10-17
- Inventor: Yen-Liang Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law LLP
- Main IPC: H01J37/34
- IPC: H01J37/34 ; B08B5/00 ; B08B13/00 ; H01J37/32

Abstract:
The present disclosure provides embodiments of a system and method for detecting processing chamber condition. The embodiments include performing a wafer-less processing step in a processing chamber to determine the condition of the chamber walls. Based on an analysis of the residual gas resulting from the wafer-less processing step, an operator or a process controller can determine whether the chamber walls have deteriorated to such an extent as to be cleaned.
Public/Granted literature
- US20220037137A1 SYSTEM AND METHOD FOR RESIDUAL GAS ANALYSIS Public/Granted day:2022-02-03
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