Invention Grant
- Patent Title: Method for forming semiconductor device
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Application No.: US17327123Application Date: 2021-05-21
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Publication No.: US11791335B2Publication Date: 2023-10-17
- Inventor: Chung-Te Lin , Wei-Yuan Lu , Feng-Cheng Yang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- The original application number of the division: US15715310 2017.09.26
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L23/522 ; H01L23/48 ; H01L29/06 ; H01L27/06 ; H01L29/66 ; H01L27/11 ; H01L49/02 ; H01L21/8234 ; H10B10/00 ; H10B61/00 ; H10N59/00 ; H01L21/8258

Abstract:
A method comprises growing an epitaxial layer on a first region of a first wafer while remaining a second region of the first wafer exposed; forming a first dielectric layer over the epitaxial layer and the second region; forming a first transistor on a second wafer; forming a second dielectric layer over the first transistor; bonding the first and second dielectric layers; and forming second and third transistors on the epitaxial layer and on the second region of the first wafer, respectively.
Public/Granted literature
- US20210280579A1 METHOD FOR FORMING SEMICONDUCTOR DEVICE Public/Granted day:2021-09-09
Information query
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