Invention Grant
- Patent Title: Semiconductor device and fabrication method thereof
-
Application No.: US17392222Application Date: 2021-08-02
-
Publication No.: US11791413B2Publication Date: 2023-10-17
- Inventor: Shi-You Liu , Shih-Cheng Chen , Chia-Wei Chang , Chia-Ming Kuo , Tsai-Yu Wen , Yu-Ren Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 2110804722.2 2021.07.16
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/02 ; H01L29/08 ; H01L23/10
Abstract:
A semiconductor device includes a fin protruding from a substrate and extending in a first direction, a gate structure extending on the fin in a second direction, and a seal layer located on the sidewall of the gate structure. A first peak carbon concentration is disposed in the seal layer. A first spacer layer is located on the seal layer. A second peak carbon concentration is disposed in the first spacer layer. A second spacer layer is located on the first spacer layer.
Public/Granted literature
- US20230014253A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2023-01-19
Information query
IPC分类:
