Invention Grant
- Patent Title: Co-axial via structure
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Application No.: US17455918Application Date: 2021-11-21
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Publication No.: US11792918B2Publication Date: 2023-10-17
- Inventor: Pei-Wei Wang , Heng-Ming Nien , Ching-Sheng Chen , Yi-Pin Lin , Shih-Liang Cheng
- Applicant: Unimicron Technology Corp.
- Applicant Address: TW Taoyuan
- Assignee: Unimicron Technology Corp.
- Current Assignee: Unimicron Technology Corp.
- Current Assignee Address: TW Taoyuan
- Agency: CKC & Partners Co., LLC
- Priority: TW 0137648 2021.10.08
- Main IPC: H05K1/02
- IPC: H05K1/02 ; H05K1/11

Abstract:
A co-axial structure includes a substrate, a first conductive structure, a second conductive structure, and an insulating layer. The substrate includes a first surface. The first conductive structure includes a first circuit deposited on the first surface and a first via penetrating the substrate. The second conductive structure includes a second circuit deposited on the first surface and a second via penetrating the substrate. The first via and the second via extend along a first direction. The first circuit and the second circuit extend along a second direction, and the second direction is perpendicular to the first direction. The insulating layer is located between the first via and the second via. The insulating layer includes a filler. The first conductive structure and the second conductive structure are electrically insulated. The first circuit and the second circuit are coplanar.
Public/Granted literature
- US20220240368A1 CO-AXIAL VIA STRUCTURE Public/Granted day:2022-07-28
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