Invention Grant
- Patent Title: Method for fabricating carrier structure
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Application No.: US17086888Application Date: 2020-11-02
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Publication No.: US11792938B2Publication Date: 2023-10-17
- Inventor: Yu-Lung Huang , Chee-Key Chung , Chang-Fu Lin , Yuan-Hung Hsu
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Silicon Precision Industries Co., Ltd.
- Current Assignee: Silicon Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Hsuanyeh Law Group PC
- Priority: TW 8131538 2019.09.02
- The original application number of the division: US16669872 2019.10.31
- Main IPC: H05K3/46
- IPC: H05K3/46 ; H05K1/18 ; H05K1/02 ; H05K3/30
Abstract:
A carrier structure is provided. A spacer is formed in an insulation board body provided with a circuit layer, and is not electrically connected to the circuit layer. The spacer breaks the insulation board body, and a structural stress of the insulation board body will not be continuously concentrated on a hard material of the insulation board body, thereby preventing warpage from occurring to the insulation board body.
Public/Granted literature
- US20210068260A1 METHOD FOR FABRICATING CARRIER STRUCTURE Public/Granted day:2021-03-04
Information query
