- 专利标题： Method of manufacturing group III nitride crystal by reacting an oxidizing gas containing nitrogen with a group III element droplet and growing a group III nitride crystal on a seed substrate
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申请号： US17359949申请日： 2021-06-28
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公开(公告)号： US11795573B2公开(公告)日： 2023-10-24
- 发明人: Yusuke Mori , Masashi Yoshimura , Masayuki Imanishi , Akira Kitamoto , Junichi Takino , Tomoaki Sumi , Yoshio Okayama
- 申请人： OSAKA UNIVERSITY , Panasonic Corporation
- 申请人地址： JP Osaka
- 专利权人： OSAKA UNIVERSITY,PANASONIC HOLDINGS CORPORATION
- 当前专利权人： OSAKA UNIVERSITY,PANASONIC HOLDINGS CORPORATION
- 当前专利权人地址： JP Osaka; JP Osaka
- 代理机构： Wenderoth, Lind & Ponack, L.L.P.
- 优先权： JP 20115825 2020.07.03
- 主分类号： C30B25/16
- IPC分类号： C30B25/16 ; C30B25/02 ; H01L21/02 ; C23C16/30 ; C30B29/40
摘要：
A method of manufacturing a group III nitride crystal according to a first aspect includes: preparing a seed substrate; generating a group III element oxide gas; supplying the group III element oxide gas; supplying a nitrogen element-containing gas; supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NO2 gas, N2O gas, and N2O4 gas; and growing the group III nitride crystal on the seed substrate.
公开/授权文献
- US20220002904A1 METHOD OF MANUFACTURING GROUP III NITRIDE CRYSTAL 公开/授权日：2022-01-06
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