- Patent Title: Method of manufacturing group III nitride crystal by reacting an oxidizing gas containing nitrogen with a group III element droplet and growing a group III nitride crystal on a seed substrate
-
Application No.: US17359949Application Date: 2021-06-28
-
Publication No.: US11795573B2Publication Date: 2023-10-24
- Inventor: Yusuke Mori , Masashi Yoshimura , Masayuki Imanishi , Akira Kitamoto , Junichi Takino , Tomoaki Sumi , Yoshio Okayama
- Applicant: OSAKA UNIVERSITY , Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: OSAKA UNIVERSITY,PANASONIC HOLDINGS CORPORATION
- Current Assignee: OSAKA UNIVERSITY,PANASONIC HOLDINGS CORPORATION
- Current Assignee Address: JP Osaka; JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP 20115825 2020.07.03
- Main IPC: C30B25/16
- IPC: C30B25/16 ; C30B25/02 ; H01L21/02 ; C23C16/30 ; C30B29/40
Abstract:
A method of manufacturing a group III nitride crystal according to a first aspect includes: preparing a seed substrate; generating a group III element oxide gas; supplying the group III element oxide gas; supplying a nitrogen element-containing gas; supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NO2 gas, N2O gas, and N2O4 gas; and growing the group III nitride crystal on the seed substrate.
Public/Granted literature
- US20220002904A1 METHOD OF MANUFACTURING GROUP III NITRIDE CRYSTAL Public/Granted day:2022-01-06
Information query
IPC分类:
