Invention Grant
- Patent Title: Memory device having a plurality of low power states
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Application No.: US17903589Application Date: 2022-09-06
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Publication No.: US11797203B2Publication Date: 2023-10-24
- Inventor: Yeon-kyu Choi , Ki-seok Oh , Seung-jun Shin , Hye-ran Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR 2016014483 2016.11.01
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C11/4074 ; G11C11/406

Abstract:
A method and memory device of controlling a plurality of low power states are provided. The method includes: entering a low power mode state, in which memory cell rows of the memory device are refreshed and power consumption is lower than in a self-refresh mode state, in response to a low power state entry command; and exiting the low power mode state based on a low power mode exit latency time that is set in a mode register of the memory device or at least one of an alarm signal and a low power mode exit command.
Public/Granted literature
- US20230004313A1 MEMORY DEVICE HAVING A PLURALITY OF LOW POWER STATES Public/Granted day:2023-01-05
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