Invention Grant
- Patent Title: Method of manufacturing a thin-film transistor having an active layer formed using atomic layer deposition
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Application No.: US17887901Application Date: 2022-08-15
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Publication No.: US11798498B2Publication Date: 2023-10-24
- Inventor: Joon Seok Park , Jun Hyung Lim , Jin Seong Park , Jiazhen Sheng , Tae Hyun Hong
- Applicant: Samsung Display Co., Ltd. , IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Applicant Address: KR Yongin-si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR 20190020017 2019.02.20
- The original application number of the division: US16782973 2020.02.05
- Main IPC: G09G3/3291
- IPC: G09G3/3291 ; G09G3/3266 ; H01L29/786 ; H01L27/12 ; H10K59/131 ; H10K59/121 ; H10K71/00 ; H10K59/12 ; H10K102/10
Abstract:
A method of manufacturing a display device including a pixel which is connected to a scan line and a data line intersecting the scan line. The pixel includes a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line. The driving transistor includes a first active layer having an oxide semiconductor containing tin (Sn).
Public/Granted literature
- US20220398983A1 CONSTRUCTION OF DRIVING TRANSISTOR IN A PIXEL OF A DISPLAY DEVICE Public/Granted day:2022-12-15
Information query
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