A memory cell that performs in-memory compute operations, includes a pair of cross-coupled inverters and a pair of transistors for selective performance of read/write/hold operations associated with logic states of the pair of cross-coupled inverters. The memory cell further includes a set of transistors that are gate coupled to and symmetrically arranged about the pair of cross coupled inverters. Output nodes of the memory cell are located at terminals of the set of transistors and provide output based on logic states of the pair of cross coupled inverters and input nodes provided between pairs of the set of transistors. A memory cell array may be generated having a high density arrangement memory cells that can perform in-memory compute operations. The memory cells can be arranged as a neural network including a set of memory cell networks that provide logic output operations based on logic states of the respective memory cells.