Invention Grant
- Patent Title: Binning-enhanced defect detection method for three-dimensional wafer structures
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Application No.: US17356473Application Date: 2021-06-23
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Publication No.: US11798828B2Publication Date: 2023-10-24
- Inventor: Zhuang Liu , Weifeng Zhou
- Applicant: KLA Corporation
- Applicant Address: US CA Milpitas
- Assignee: KLA Corporation
- Current Assignee: KLA Corporation
- Current Assignee Address: US CA Milpitas
- Agency: HODGSON RUSS LLP
- Main IPC: H01L21/67
- IPC: H01L21/67 ; G06T7/00 ; G03F7/20 ; G06T7/73 ; G03F7/00
Abstract:
Location-based binning can separate defects on different rows of channel holes in a 3D NAND structure to corresponding bins. A one-dimensional projection of an image is generated and a one-dimensional curve is formed. A mask is generated from the one-dimensional curve. Defects in the image are detected using the mask and location-based binning is performed.
Public/Granted literature
- US20220076973A1 BINNING-ENHANCED DEFECT DETECTION METHOD FOR THREE-DIMENSIONAL WAFER STRUCTURES Public/Granted day:2022-03-10
Information query
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