- 专利标题: Self-assembled dielectric on metal RIE lines to increase reliability
-
申请号: US17337753申请日: 2021-06-03
-
公开(公告)号: US11798840B2公开(公告)日: 2023-10-24
- 发明人: Wei-Hao Liao , Hsi-Wen Tien , Chih Wei Lu , Yu-Teng Dai , Hsin-Chieh Yao , Chung-Ju Lee
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Eschweiler & Potashnik, LLC
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L23/522
摘要:
Some embodiments of the present disclosure relate to a semiconductor structure including a first conductive wire disposed over a substrate. A dielectric liner is arranged along sidewalls and an upper surface of the first conductive wire and is laterally surrounded by a first dielectric layer. The dielectric liner and the first dielectric layer are different materials. A conductive via is disposed within a second dielectric layer over the first conductive wire. The conductive via has a first lower surface disposed over the first dielectric layer and a second lower surface below the first lower surface and over the first conductive wire.
公开/授权文献
信息查询
IPC分类: