Invention Grant
- Patent Title: Interconnection structure and semiconductor package including the same
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Application No.: US17308643Application Date: 2021-05-05
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Publication No.: US11798872B2Publication Date: 2023-10-24
- Inventor: Junyun Kweon , Jumyong Park , Jin Ho An , Dongjoon Oh , Jeonggi Jin , Hyunsu Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20200111767 2020.09.02
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L23/498 ; H01L23/00 ; H01L25/10

Abstract:
Disclosed are interconnection patterns and semiconductor packages including the same. The interconnection pattern comprises a first dielectric layer, a first interconnection pattern in the first dielectric layer, a first barrier layer between the first interconnection pattern and the first dielectric layer, a first top surface of the first barrier layer located at a level lower than that of a second top surface of the first dielectric layer and lower than that of a third top surface of the first interconnection pattern, a second barrier layer on the first barrier layer, the second barrier layer interposed between the first interconnection pattern and the first dielectric layer, a second dielectric layer on the first dielectric layer, the first interconnection pattern, and the second barrier layer, and a second interconnection pattern formed in the second dielectric layer and electrically coupled to the first interconnection pattern.
Public/Granted literature
- US20220068779A1 INTERCONNECTION STRUCTURE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME Public/Granted day:2022-03-03
Information query
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