- 专利标题: Electrode structure, method of manufacturing the electrode structure, and secondary battery including the electrode structure
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申请号: US16598038申请日: 2019-10-10
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公开(公告)号: US11799073B2公开(公告)日: 2023-10-24
- 发明人: Huisu Jeong , Hwiyeol Park , Kyounghwan Kim , Jeongkuk Shon , Junhyeong Lee , Sungjin Lim , Jin S. Heo
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Gyeonggi-Do
- 代理机构: CANTOR COLBURN LLP
- 优先权: KR 20180134437 2018.11.05
- 主分类号: H01M4/36
- IPC分类号: H01M4/36 ; H01M4/02
摘要:
An electrode structure includes: a base layer including a first active material; a plurality of active material plates, a plate of the plurality of active material plates including opposing side walls and a lower wall, wherein the lower wall is disposed on the base layer, wherein adjacent plates of the plurality of active material plates are spaced apart from each other, and wherein an active material plate of the plurality of active material plates includes a second active material; and a channel between adjacent plates of the plurality of active material plates, wherein the channel includes a first channel region defined by adjacent side walls of the adjacent plates, and a second channel region connected to the first channel region and defined by a lower wall of the adjacent plates and the base layer.
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