- 专利标题: Method of forming an integrated resonator with a mass bias
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申请号: US16551757申请日: 2019-08-27
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公开(公告)号: US11799436B2公开(公告)日: 2023-10-24
- 发明人: Byron Neville Burgess , William Robert Krenik , Stuart M. Jacobsen
- 申请人: TEXAS INSTRUMENTS INCORPORATED
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: US TX Dallas
- 代理商 Andrew R. Ralston; Frank D. Cimino
- 分案原申请号: US13484931 2012.05.31
- 主分类号: H03H3/04
- IPC分类号: H03H3/04 ; H03H9/10 ; H03H3/02 ; H03H9/02 ; H03H9/17 ; H01L23/498 ; H01L23/31 ; H03H9/05
摘要:
A method of forming a resonator includes forming top and bottom dielectric structures over a substrate. A piezoelectric layer is formed between the top and bottom dielectric structures. A bottom electrode is formed between the piezoelectric layer and the bottom dielectric structure, and a top electrode is formed between the piezoelectric layer and the top dielectric structure. A metal layer is formed over the top dielectric structure and is patterned, thereby forming a first contact pad making electrical contact to the top electrode, a second contact pad making electrical contact with the bottom electrode, and a mass bias located over the top dielectric structure.
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