Invention Grant
- Patent Title: Thermalization arrangement at cryogenic temperatures
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Application No.: US17676581Application Date: 2022-02-21
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Publication No.: US11800689B2Publication Date: 2023-10-24
- Inventor: Mika Prunnila , Alberto Ronzani , Emma Mykkänen , Antti Kemppinen , Janne Lehtinen
- Applicant: Teknologian tutkimuskeskus VTT Oy
- Applicant Address: FI Espoo
- Assignee: Teknologian tutkimuskeskus VTT Oy
- Current Assignee: Teknologian tutkimuskeskus VTT Oy
- Current Assignee Address: FI Espoo
- Agency: Meunier Carlin & Curfman LLC
- Priority: FI 215201 2021.02.23
- Main IPC: H05K7/20
- IPC: H05K7/20 ; F28D19/00 ; F28F21/08 ; H01L23/373 ; F28F13/00 ; F25D19/00 ; H10N60/10

Abstract:
An inventive embodiment comprises a thermalization arrangement at cryogenic temperatures. The arrangement comprises a dielectric substrate (2) layer on which substrate a device/s or component/s (1) are positionable. A heat sink component (4) is attached on another side of the substrate. The arrangement further comprises a conductive layer (5) between the substrate layer (2) and the heat sink component (4). A joint between the substrate layer (2) and the conductive layer (5) has minimal thermal boundary resistance. Another joint between the conductive layer (5) and the cooling heat sink layer (4) is electrically conductive.
Public/Granted literature
- US20220272869A1 THERMALIZATION ARRANGEMENT AT CRYOGENIC TEMPERATURES Public/Granted day:2022-08-25
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