Implementing a read setup burst command in 3D NAND flash memory to reduce voltage threshold deviation over time
Abstract:
A memory comprising a memory array, including a plurality of blocks, and control circuits comprising logic to execute operations is provided. The operations include decoding a read setup burst command identifying (i) an address of a first read setup block in a set of read setup blocks and (ii) a number of read setup blocks, as candidates for read setup operations. The operations further including, in response to the decoding of the read setup burst command, performing a read setup burst operation on a plurality of read setup blocks of the set of read setup blocks.
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