Invention Grant
- Patent Title: Implementing a read setup burst command in 3D NAND flash memory to reduce voltage threshold deviation over time
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Application No.: US17238757Application Date: 2021-04-23
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Publication No.: US11803326B2Publication Date: 2023-10-31
- Inventor: Chien-Hsin Liu , Yu-Chih Yeh , Chin-Chu Chung
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Agent Andrew L. Dunlap
- Main IPC: G06F3/00
- IPC: G06F3/00 ; G06F3/06

Abstract:
A memory comprising a memory array, including a plurality of blocks, and control circuits comprising logic to execute operations is provided. The operations include decoding a read setup burst command identifying (i) an address of a first read setup block in a set of read setup blocks and (ii) a number of read setup blocks, as candidates for read setup operations. The operations further including, in response to the decoding of the read setup burst command, performing a read setup burst operation on a plurality of read setup blocks of the set of read setup blocks.
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