Invention Grant
- Patent Title: Error caching techniques for improved error correction in a memory device
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Application No.: US17943581Application Date: 2022-09-13
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Publication No.: US11803442B2Publication Date: 2023-10-31
- Inventor: Sean S. Eilert , William A. Melton , Justin Eno
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; G06F12/0875

Abstract:
Methods, systems, and devices for error caching techniques for improved error correction in a memory device are described. An apparatus, such as a memory device, may use an error cache to store indications of memory cells identified as defective and may augment an error correction procedure using the stored indications. If one or more errors are detected in data read from the memory array, the apparatus may check the error cache, and if a bit of the data is indicated as being associated with a defective cell, the bit may be inverted. After such inversion, the data may be checked for errors again. If the inversion corrects an error, the resulting data may be error-free or may include a reduced quantity of errors that may be correctable using an error correction scheme.
Public/Granted literature
- US20230071764A1 ERROR CACHING TECHNIQUES FOR IMPROVED ERROR CORRECTION IN A MEMORY DEVICE Public/Granted day:2023-03-09
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