Invention Grant
- Patent Title: Fault resilient storage device
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Application No.: US17109053Application Date: 2020-12-01
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Publication No.: US11803446B2Publication Date: 2023-10-31
- Inventor: Yang Seok Ki , Sungwook Ryu , Seontaek Kim , Changho Choi , Ehsan Najafabadi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F11/14 ; G06F3/06 ; G06F11/07 ; G06F11/10 ; G06F11/20 ; G06F11/30 ; G06F11/32 ; G06F11/34 ; G06F12/0882 ; G06F12/1009

Abstract:
A storage device, and a method for operating a storage device. In some embodiments, the storage device includes storage media, and the method includes: determining, by the storage device, that the storage device is in a first fault state from which recovery is possible by power cycling the storage device or by formatting the storage media; determining, by the storage device, that the storage device is in a second fault state from which partial recovery is possible by operating the storage device with reduced performance, with reduced capacity, or in a read-only mode; and operating the storage device with reduced performance, with reduced capacity, or in the read-only mode.
Public/Granted literature
- US20220012145A1 FAULT RESILIENT STORAGE DEVICE Public/Granted day:2022-01-13
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