- 专利标题: Semiconductor device and manufacturing method thereof
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申请号: US17190918申请日: 2021-03-03
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公开(公告)号: US11804464B2公开(公告)日: 2023-10-31
- 发明人: Keiichi Niwa
- 申请人: Kioxia Corporation
- 申请人地址: JP Tokyo
- 专利权人: KIOXIA CORPORATION
- 当前专利权人: KIOXIA CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Foley & Lardner LLP
- 优先权: JP 20116296 2020.07.06
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L25/18 ; H01L21/56 ; H01L23/31 ; H01L23/29 ; H01L23/538
摘要:
A semiconductor device includes a wiring board; a first semiconductor chip including a first surface, a second surface, and a connection bump on the first surface, the first semiconductor chip coupled to the wiring board through the connection bump; a resin layer covering the connection bump between the first semiconductor chip and the wiring board, an upper surface of the resin layer parallel to the second surface of the first semiconductor chip; and a second semiconductor chip including a third surface, a fourth surface, and an adhesive layer on the third surface, the second semiconductor chip adhering to the second surface of the first semiconductor chip and the upper surface of the resin layer through the adhesive layer. The upper surface of the resin layer projects outside a portion of at least an outer edge of the second semiconductor chip when viewed from the top.
公开/授权文献
- US20220005779A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日:2022-01-06
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