Invention Grant
- Patent Title: Transistor device, manufacturing method thereof, display substrate and display device
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Application No.: US17048138Application Date: 2020-04-22
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Publication No.: US11804496B2Publication Date: 2023-10-31
- Inventor: Kui Gong , Li Li , Wei Sun , Yuhu Zhang , Lei Yu , Hongwei Wang , Ru Xu
- Applicant: Hefei BOE Optoelectronics Technology Co., Ltd. , BOE Technology Group Co., Ltd.
- Applicant Address: CN Anhui
- Assignee: HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Anhui; CN Beijing
- Agency: Lippes Mathias LLP
- Priority: CN 1910410880.2 2019.05.16
- International Application: PCT/CN2020/086129 2020.04.22
- International Announcement: WO2020/228499A 2020.11.19
- Date entered country: 2020-10-16
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L27/12

Abstract:
The present disclosure provides a transistor device, a manufacturing method thereof, a display substrate and a display device. The transistor device includes a base substrate, as well as a first transistor and a second transistor that are disposed on the base substrate. The first transistor includes a first active layer. The second transistor includes a second gate. The first active layer and the second gate are disposed in the same layer.
Public/Granted literature
- US20230131513A1 TRANSISTOR DEVICE, MANUFACTURING METHOD THEREOF, DISPLAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2023-04-27
Information query
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