Invention Grant
- Patent Title: Method of forming a high electron mobility transistor
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Application No.: US17303331Application Date: 2021-05-26
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Publication No.: US11804538B2Publication Date: 2023-10-31
- Inventor: Chun-Wei Hsu , Jiun-Lei Jerry Yu , Fu-Wei Yao , Chen-Ju Yu , Fu-Chih Yang , Chun Lin Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: HAYNES AND BOONE, LLP
- The original application number of the division: US13338962 2011.12.28
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/20 ; H01L29/417 ; H01L29/43 ; H01L29/778 ; H01L29/10 ; H01L29/267 ; H01L21/02
Abstract:
A method of forming a high electron mobility transistor (HEMT) includes a first III-V compound layer and a second III-V compound layer disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A source feature and a drain feature are disposed on the second III-V compound layer. A p-type layer is disposed on a portion of the second III-V compound layer between the source feature and the drain feature. A gate electrode is disposed on the p-type layer. A capping layer is disposed on the second III-V compound layer.
Public/Granted literature
- US20210280689A1 METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR Public/Granted day:2021-09-09
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