A memory device is disclosed. The memory device includes a first program line and a second program line. A first portion of the first program line is formed in a first conductive layer, and a second portion of the first program line is formed in a second conductive layer above the first conductive layer. A first portion of the second program line is formed in the first conductive layer, and a second portion of the second program line is formed in a third conductive layer above the second conductive layer. A width of at least one of the second portion of the first program line or the second portion of the second program line is different from a width of at least one of the first portion of the first program line or the first portion of the second program line. A method is also disclosed herein.