- 专利标题: Laser processing apparatus, laser processing method, and method for manufacturing semiconductor apparatus
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申请号: US16772072申请日: 2018-02-02
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公开(公告)号: US11813694B2公开(公告)日: 2023-11-14
- 发明人: Naoyuki Kobayashi , Masashi Machida , Hiroaki Imamura
- 申请人: JSW AKTINA SYSTEM CO., LTD.
- 申请人地址: JP Yokohama
- 专利权人: JSW AKTINA SYSTEM CO., LTD
- 当前专利权人: JSW AKTINA SYSTEM CO., LTD
- 当前专利权人地址: JP Yokohama
- 代理机构: Potomac Law Group, PLLC
- 国际申请: PCT/JP2018/003564 2018.02.02
- 国际公布: WO2019/150549A 2019.08.08
- 进入国家日期: 2020-06-11
- 主分类号: B23K26/035
- IPC分类号: B23K26/035 ; B23K26/384 ; B23K101/40
摘要:
A laser processing apparatus and a laser processing method that can effectively prevent a processing time for one semiconductor film from increasing are provided. A laser processing apparatus (1) according to an embodiment includes a laser light source (2) configured to irradiate a semiconductor film (M1) with a laser beam, a film state measuring instrument (5) configured to measure a state of the semiconductor film after the semiconductor film (M1) is irradiated with the laser beam, and a laser light adjusting mechanism configured to adjust a timing at which the semiconductor film (M1) is irradiated with a next laser beam and intensity of the laser beam according to the state of the semiconductor film (M1) measured by the film state measuring instrument (5).
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