Invention Grant
- Patent Title: Methods of selective atomic layer deposition
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Application No.: US17182906Application Date: 2021-02-23
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Publication No.: US11821085B2Publication Date: 2023-11-21
- Inventor: Bhaskar Jyoti Bhuyan , Mark Saly , David Thompson , Tobin Kaufman-Osborn , Kurt Fredrickson , Thomas Knisley , Liqi Wu
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- The original application number of the division: US16382643 2019.04.12
- Main IPC: C23C16/455
- IPC: C23C16/455 ; H01L21/02

Abstract:
Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.
Public/Granted literature
- US20210189562A1 Methods Of Selective Atomic Layer Deposition Public/Granted day:2021-06-24
Information query
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